• DocumentCode
    309807
  • Title

    Performance of SDS BF3 vs. high pressure BF3 in ion implantation

  • Author

    Boyd, Wendell, Jr. ; Hilkene, Martin ; McManus, Jim ; Edwards, Doug ; Romig, Terry ; Bennett, Joe

  • Author_Institution
    Appl. Materials, Austin, TX, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    299
  • Lastpage
    302
  • Abstract
    With the new development of low pressure packaging of boron trifluoride (BF3), better known as Safe Delivery Source (SDS), key process concerns were investigated on a 9500×R implanter to compare SDS to high pressure (HP) BF3. The key process concerns were broken down into five categories: (1) Maximum Beam Currents, (2) Sheet Resistance, (3) Depth Profiles, (4) Contamination, and (5) Mass Spectra. Release rates from a fully open SDS cylinder were studied by ATMI
  • Keywords
    boron compounds; ion implantation; safety; 9500xR implanter; ATMI; BF3; SDS BF3; SDS cylinder; Safe Delivery Source; beam current; boron trifluoride; contamination; depth profile; high pressure BF3; ion implantation; low pressure packaging; mass spectra; process gas; sheet resistance; Boron; Feeds; Gases; Ion implantation; Life testing; Magnetic materials; Mass spectroscopy; Monitoring; Solids; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586268
  • Filename
    586268
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=309807