Activation study of boron doped ion beam synthesised Si-Ge

Author

Gwilliam, R.M. ; Curello, G. ; Sealy, B.J. ; Rodriguez, A. ; Botella, M.L. ; Rodriguez, T.

Author_Institution

Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK

fYear

1996

fDate

16-21 Jun 1996

Firstpage

694

Lastpage

697

Abstract

Current IR sensor technology using SiGe layers on Si relies upon p ⁺ doping of the SiGe layers. Consistent with selected area device production, IBS has been used to form Si_0.9Ge_0.1:B layers which were subsequently implanted with BF₂ to levels of 10²¹ ions/cc. Using post-amorphisation techniques in conjunction with rapid thermal annealing at temperatures between 650 and 1050°C, carrier concentrations in excess of 5×10²⁰ holes/cc have been achieved. In this paper, electrical results obtained by differential Hall effect and spreading resistance will be discussed in conjunction with structural studies using X-sectional TEM and ion channelling

Keywords

Ge-Si alloys; Hall effect; amorphisation; boron; carrier density; channelling; electrical resistivity; ion implantation; rapid thermal annealing; semiconductor doping; semiconductor materials; transmission electron microscopy; 650 to 1050 C; BF₂ ion implantation; IR sensor technology; Si_0.9Ge_0.1:B; amorphisation; boron p⁺ doping; carrier concentration; cross-sectional TEM; differential Hall effect; electrical activation; ion beam synthesis; ion channelling; rapid thermal annealing; selected area device; spreading resistance; structure; Boron; Doping; Germanium silicon alloys; Hall effect; Infrared sensors; Ion beams; Production; Rapid thermal annealing; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586509

Filename

586509