A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

Author

Modelli, A. ; Gilardoni, F. ; Ielmini, Daniele ; Spinelli, A.S.

Author_Institution

Central R&D, STMicroelectron., Agrate Brianza, Italy

fYear

2001

fDate

2001

Firstpage

61

Lastpage

66

Abstract

The temperature dependence of the anomalous leakage current in the tail cells of flash memory is investigated on arrays with different oxide thicknesses. It is shown that both the conduction mechanism and the annealing kinetics of the leakage current change when the thickness is reduced below about 8 nm, becoming independent of temperature. The microscopic conduction of the tail cells is analyzed to investigate the conduction model in thin oxides

Keywords

annealing; dielectric thin films; electrical conductivity; flash memories; integrated circuit modelling; integrated circuit testing; integrated memory circuits; leakage currents; 8 nm; SiO₂-Si; annealing kinetics; anomalous cells; anomalous leakage current; conduction mechanism; conduction model; flash memory; leakage current; microscopic conduction; oxide thickness; tail cells; temperature dependence; thin oxide flash EEPROMs; thin oxides; Annealing; CMOS technology; Capacitors; EPROM; Flash memory; Leakage current; Oxidation; Tail; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922883

Filename

922883