Accelerated stressing and degradation mechanisms for Si-based photo-emitters

A silicon p-n junction biased in avalanche breakdown emits visible light and its integration offers the potential for VLSI-compatible optical interconnect systems, enabling next generation technologies and/or contact-less functional testing. The Si light emitters were stressed with AC and DC excitation and increased temperature to accelerate the aging. The results clearly show that the effects of AC and temperature stressing are negligible on light emission. DC stressing results in light coalescence for low values of current (<25 mA) with total light emission from the junction remaining constant. However, for DC stressing with large current (>40 mA), there is no significant variation of light emission. Changes in the light emission behavior for large and small values of DC excitation are consistent with a hydrogen migration model. The study revealed a strong dependence of light emission on the layout of test devices