Modified RCA clean transfer of graphene and all-carbon electronic devices fabrication

Graphene is regarded as a promising material that could be the basis for future generations of low-power, faster, and smaller electronics [1,2]. Currently, chemical vapor deposition (CVD) growth method is the only way that can produce large area monolayer graphene up to tens of inches with high quality [3,4], which makes it the most promising graphene producing method for large scale device applications. The first step necessary in fabricating devices from CVD-grown graphene, is to transfer the graphene from the metal growth substrate onto a device-compatible substrate (typically an insulator). It is crucial to device performance, yield, and uniformity that the quality of the graphene is not degraded during this transfer process.