Photonic devices properties of zinc nitride film produced by reactive magnetron sputtering

Author

Wen, Ting ; Jayatissa, Ahalapitiya H.

Author_Institution

Univ. of Toledo, Toledo, OH, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Zinc nitride films were prepared by the rf-magnetron sputtering using Zn target in Ar-N₂ plasma for 30 min at 300 W and annealed for 1 h in O₂ at 300 °C. The XRD measurement indicated that the as-deposited film had polycrystalline structure with five peaks corresponding to the cubic anti-bixbyite Zn₃N₂ and exhibited preferred orientation (400). The annealing weakened the crystallinity and generated ZnO texture. The AFM images revealed that no significant change was generated in the grain size and surface roughness. Direct band gaps of 1.15 eV and 1.4 eV were obtained for the as-deposited and annealed films respectively. The photoconductivity measurements indicated that the as-deposited film did not have any response whereas the annealed film was photoconductive.

Keywords

X-ray diffraction; annealing; atomic force microscopy; energy gap; grain size; photoconductivity; photonic band gap; sputter deposition; surface roughness; surface texture; thin films; zinc compounds; AFM images; Ar-nitrogen plasma; XRD measurement; Zn target; Zn₃N₂; ZnO texture; annealing; crystallinity; cubic antibixbyite; direct band gaps; grain size; photoconductivity measurements; photonic device properties; polycrystalline structure; power 300 W; preferred orientation (400); reactive magnetron sputtering; rf-magnetron sputtering; surface roughness; temperature 300 degC; time 1 h; time 30 min; zinc nitride film; Annealing; Films; Optical surface waves; Photoconductivity; Rough surfaces; Surface morphology; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135309

Filename

6135309