• DocumentCode
    310115
  • Title

    Periodic gain surface-emitting lasers with low threshold current densities

  • Author

    Yoo, Byueng-Su ; Park, Hyo-Hoon ; Lee, El-Hang

  • Author_Institution
    Electron. & Telecommun. Res. Inst., Taejon, South Korea
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    254
  • Abstract
    Threshold current densities as low as 370-440 A/cm2 and differential quantum efficiencies of 26-32% have been obtained for air-post index-guided bottom-emitting InGaAs VCSELs using a periodic gain 2λ active structure. The low threshold current densities with high differential quantum efficiencies suggest that the periodic gain active structure is useful in improving threshold characteristics of VCSELs without deteriorating output power characteristics
  • Keywords
    surface emitting lasers; 26 to 32 percent; InGaAs; air-post index-guided bottom-emitting VCSELs; differential quantum efficiencies; output power; periodic gain active structure; surface-emitting lasers; threshold current densities; Gallium arsenide; Gold; Laser modes; Periodic structures; Plugs; Power generation; Surface emitting lasers; Surface resistance; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586989
  • Filename
    586989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310115