DocumentCode
310139
Title
Long-term operation reliability of AlGaInP visible laser diodes
Author
Kobayashi, Kenichi ; Hotta, Hitoshi ; Endo, Kenji
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
315
Abstract
As AlGaInP visible laser diodes (LDs) become used in an increasingly wide range of applications, such as high-density optical disc systems, bar-code reader systems and plastic fiber communications, highly reliable operation is becoming increasingly important. In this paper, we discuss the long-term operation reliability of AlGaInP LDs from the viewpoint of current-induced degradation. We show by numerical simulation that the reliability of AlGaInP LDs depends strongly on the initial lasing characteristics
Keywords
laser theory; AlGaInP; AlGaInP visible laser diodes; current-induced degradation; numerical simulation; reliability; Diode lasers; Gallium arsenide; Lifetime estimation; Maintenance; Numerical simulation; Optical waveguides; Quantum well devices; Sprites (computer); Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.587020
Filename
587020
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