DocumentCode
310143
Title
Stable oxide growth and light emission during the pulsed anodization of an (AlGa)0.5In0.5P visible laser wafer
Author
Largent, C.C. ; Wu, C.H. ; Grove, M.J. ; Zory, P.S. ; Bour, D.P.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
325
Abstract
We have developed a novel technique to grow stable, native oxides for current blocking layers in visible (AlGa)0.5In0.5 P lasers. The oxides are stable in air and remain stable after baking at 150°C for one hour. In addition, we characterized the light emitted during the pulsed anodization process. The spectral profile of the emission is similar to photoluminescence profiles and is blue-shifted with respect to the lasing wavelength. This data, collected during the laser fabrication process, can be used to predict the lasing wavelength
Keywords
semiconductor lasers; (AlGa)0.5In0.5P; 150 C; baking; current blocking layers; fabrication; light emission; oxide growth; photoluminescence; pulsed anodization; visible laser; Laser stability; Materials reliability; Optical materials; Optical pulses; Oxidation; Power lasers; Pulsed laser deposition; Semiconductor device reliability; Semiconductor laser arrays; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.587025
Filename
587025
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