• DocumentCode
    310144
  • Title

    Recent developments in SiC-based visible emitters

  • Author

    Edmond, John A. ; Irvine, Kenneth ; Bulman, Gary ; Kong, H.-S. ; Suvarov, Alexander ; Dmitriev, Vladimir

  • Author_Institution
    Cree Res. Inc., Durham, NC, USA
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    327
  • Abstract
    In recent years, there has been rapidly growing interest and progress in the development of blue and pure green light emitting materials for LED and laser applications. Most recent developments have been reported for the direct bandgap materials, ZnSe and GaN. However, a compatible substrate is needed for nitride-based emitters to become commercially viable. Although less efficient, the commercial viability of SiC-based LEDs has already been proven. This paper reports on the most recent advancements in increasing the performance of blue and green light emitting diodes fabricated in homoepitaxial 6H-SiC and the potential for SiC-nitride based LEDs
  • Keywords
    silicon compounds; SiC; SiC-GaN; SiC-nitride system; blue LEDs; green LEDs; homoepitaxial 6H-SiC; light emitting diodes; visible emitters; Crystalline materials; DH-HEMTs; Degradation; Gallium nitride; Light emitting diodes; Optical materials; Photonic band gap; Silicon carbide; Substrates; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.587026
  • Filename
    587026