DocumentCode
310151
Title
Prediction of lower current threshold in tensile strained ZnCdSe/ZnMgSSe multiple quantum well blue-green lasers
Author
Huang, W. ; Jain, F.C.
Author_Institution
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
341
Abstract
Gain coefficient involving excitonic transitions is calculated for unstrained as well as strained ZnCdSe/ZnMgSSe multiple quantum well (MQW) lasers as a function of operating wavelength and current density. This paper models the behavior of radiative recombination involving excitons as well as free carriers in strained layer blue-green quantum well lasers, and predicts for the first time a low threshold operation in tensile strained active layers. For example, the tensile strained Zn .8Cd.2Se-ZnMgSSe quantum well lasers are shown to operate at threshold current density as low as 180 A/cm2, which is about the half of the compressive strain case
Keywords
laser theory; Zn0.8Cd0.2Se-ZnMgSSe; excitonic transitions; free carriers; gain coefficient; radiative recombination; tensile strained ZnCdSe/ZnMgSSe multiple quantum well blue-green lasers; threshold current density; Current density; Excitons; Laser modes; Laser transitions; Predictive models; Quantum well devices; Quantum well lasers; Radiative recombination; Threshold current; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.587033
Filename
587033
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