• DocumentCode
    310151
  • Title

    Prediction of lower current threshold in tensile strained ZnCdSe/ZnMgSSe multiple quantum well blue-green lasers

  • Author

    Huang, W. ; Jain, F.C.

  • Author_Institution
    Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    341
  • Abstract
    Gain coefficient involving excitonic transitions is calculated for unstrained as well as strained ZnCdSe/ZnMgSSe multiple quantum well (MQW) lasers as a function of operating wavelength and current density. This paper models the behavior of radiative recombination involving excitons as well as free carriers in strained layer blue-green quantum well lasers, and predicts for the first time a low threshold operation in tensile strained active layers. For example, the tensile strained Zn .8Cd.2Se-ZnMgSSe quantum well lasers are shown to operate at threshold current density as low as 180 A/cm2, which is about the half of the compressive strain case
  • Keywords
    laser theory; Zn0.8Cd0.2Se-ZnMgSSe; excitonic transitions; free carriers; gain coefficient; radiative recombination; tensile strained ZnCdSe/ZnMgSSe multiple quantum well blue-green lasers; threshold current density; Current density; Excitons; Laser modes; Laser transitions; Predictive models; Quantum well devices; Quantum well lasers; Radiative recombination; Threshold current; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.587033
  • Filename
    587033