• DocumentCode
    3101597
  • Title

    Effect of inlet orifice on saturated CHF and flow visualization in multi-microchannel heat sinks

  • Author

    Park, Jung Eung ; Thome, John R. ; Michel, Bruno

  • Author_Institution
    Lab. of Heat & Mass Transfer, Ecole Polytech. Fed. de Lausanne, Lausanne
  • fYear
    2009
  • fDate
    15-19 March 2009
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    This article investigates the effect of inlet orifices on saturated critical heat flux (CHF) in multi-microchannel heat sinks. Two different multi-microchannel heat sinks made in copper were tested with three low pressure refrigerants (R134a, R236fa, R245fa). One had 20 parallel rectangular microchannels of 467 times 4052 mum (width times depth) while the other had 29 channels of 199 times 756 mum (width times depth). Flow visualization has been conducted with and without an orifice insert at the inlet of microchannels. Visualization confirmed the existence of flow instability, back flow and non-uniform distribution of flow among the channels when the insert with orifices was removed. Flow patterns in the microchannels and their evolution with increasing heat flux were observed. The flow boiling curves suggest that in the case of omitting the orifice, the boiling incipient occurred at a higher heat flux resulting in a higher overshoot of wall temperature. Moreover, the flow was easily subjected to instability and caused CHF to occur at much lower values than occurred with the orifices in place.
  • Keywords
    flow instability; flow visualisation; microchannel flow; chip cooling; critical heat flux; flow boiling curves; flow visualization; inlet orifice; multi-microchannel heat sinks; saturated CHF; Electronics cooling; Energy consumption; Heat sinks; Heat transfer; Laboratories; Microchannel; Orifices; Temperature; Testing; Visualization; chip cooling; critical heat flux; flow boiling; flow visualization; instability; multi-microchannel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium, 2009. SEMI-THERM 2009. 25th Annual IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    1065-2221
  • Print_ISBN
    978-1-4244-3664-4
  • Electronic_ISBN
    1065-2221
  • Type

    conf

  • DOI
    10.1109/STHERM.2009.4810735
  • Filename
    4810735