Effect of infrared filter on the electrical characteristics of silicon-based PIN photo-detectors

The p-n junction is one of the most widely used technology in the semiconductor device. In the various pn junction types like photodiode, solar cell and LED etc., the dark leakage current can determine the device performance and power. Therefor it is very important to minimize the dark leakage current and to optimize the device performance. Among these various pnjuncton diodes, photodiode has been used for a long time in the detect sensor device field. One of the important parameters in the photo detectors is the device senstivity to light. In order to enhance the photo-senstivity, many types of light filter has been tasted and used to maximize the device performance. In this present work, the dark current and photo current have been studied by measurment of I-V and C-V at different light intensity. The photo senstivity on the infrared filter types also has been investigated.