DocumentCode
3102339
Title
Degradation of the characteristics of p+ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing
Author
Mazumder, Malay K. ; Teramoto, A. ; Kobayashi, K. ; Sekine, M. ; Kawazu, S. ; Koyama, H.
Author_Institution
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1997
fDate
13-16 Oct 1997
Firstpage
142
Lastpage
143
Abstract
Summary form only given. Wet oxides annealed in NO ambient for two different temperatures and degradation due to post N2 annealing on the characteristics of p+ poly MOS capacitors have been investigated. Results show that samples with N2 post annealing at 900°C have a large increase in leakage current and charge trapping compared with samples without N2 post annealing. Although NO annealing improves the SiO2-Si interface, post annealing in N2 at a high temperature of 900°C for 30 minutes may diffuse boron from the p+ poly to the gate oxide, and hence degrades the characteristics of p+ poly Si gate oxide
Keywords
CMOS integrated circuits; MOS capacitors; annealing; dielectric thin films; elemental semiconductors; integrated circuit reliability; integrated circuit testing; integrated circuit yield; nitridation; nitrogen; nitrogen compounds; silicon; 30 min; 900 C; CMOS ICs; N2; N2 post annealing; NO; NO ambient; NO annealing; NO nitrided gate oxide; Si; SiO2-Si; SiO2-Si interface; SiON-Si; SiON:B-Si; anneal temperature; boron diffusion; charge trapping; gate oxide; leakage current; p+ poly MOS capacitors; p+ poly Si gate oxide degradation; post nitrogen annealing; wet oxides; Annealing; Boron; Degradation; Leakage current; MOS capacitors; Nitrogen; Oxidation; Stress; Temperature dependence; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 1997 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-4205-4
Type
conf
DOI
10.1109/IRWS.1997.660311
Filename
660311
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