The impact of emitter fingers layout and geometry on InGaP HBT thermal resistance

Author

Yu, Evan F. ; Hill, Darrell G. ; Zhang, Lisa ; Hartin, Olin L.

Author_Institution

Microwave & Mixed-Signal Technol. Lab., Freescale Semicond., Inc, Tempe, AZ, USA

fYear

2004

fDate

24 Oct. 2004

Firstpage

21

Lastpage

31

Abstract

As InGaP heterojunction bipolar transistors are becoming widely used for wireless handset power amplifier applications, it is not only in the best interests of device and circuit reliability, but also for devices performance, to optimize thermal management through proper device design. In this work, we report a thermal analysis on multi emitter-finger HBT devices with various emitter finger geometry and layout options. Three techniques, including direct electrical measurement and extraction, high resolution (∼3 μm) infared (IR) thermal imaging, as well as thermal simulation (ANSYS), were employed in the study.

Keywords

III-V semiconductors; finite element analysis; gallium compounds; heterojunction bipolar transistors; indium compounds; infrared imaging; optimisation; semiconductor device measurement; semiconductor device reliability; thermal analysis; thermal management (packaging); thermal resistance; thermal resistance measurement; HBT thermal resistance; InGaP; circuit reliability; device reliability; emitter finger geometry; emitter finger layout; finite element thermal simulation; high resolution IR thermal imaging; multiple-emitter-finger HBT devices; thermal analysis; thermal management optimization; wireless handset power amplifiers; Circuits; Design optimization; Energy management; Fingers; Geometry; Heterojunction bipolar transistors; Power amplifiers; Telephone sets; Thermal management; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2004.[Reliability of Compound Semiconductors]

Print_ISBN

0-7908-0105-1

Type

conf

DOI

10.1109/ROCS.2004.184342

Filename

1424933