Photonic DC and microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET

Author

Kim, H.J. ; Song, S.H. ; Kim, D.M. ; Han, I.K. ; Lee, J.I. ; Kang, K.N. ; Kim, S.H. ; Choi, S.S. ; Cho, K.

Author_Institution

Div. of Electron. & Inf. Technol., KIST, Seoul, South Korea

Volume

Supplement

fYear

1996

fDate

5-5 Dec. 1996

Firstpage

33

Abstract

In this work, we report photonic microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET controlled by /spl lambda/=0.83 /spl mu/m optical source. With photonic controlled DC and microwave characteristics, we extracted nonlinear equivalent circuit model parameters of the fabricated MODFET, and investigated the physical mechanism of microwave performance improvement in the MODFET.

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; 0.83 micron; AlGaAs-GaAs-InGaAs; HEMT; microwave performance improvement; model parameters extraction; nonlinear equivalent circuit model parameters; optical source; optically-controlled MODFET; photonic DC characteristics; photonic microwave characteristics; pseudomorphic MODFET; Gallium arsenide; HEMTs; Indium gallium arsenide; Lighting; MODFET circuits; Microwave devices; Nonlinear optics; Optical control; Optical devices; Optical saturation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1996. MWP '96. Technical Digest., 1996 Internatonal Topical Meeting on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-3129-X

Type

conf

DOI

10.1109/MWP.1996.660359

Filename

660359