DocumentCode
310833
Title
Plasma Induced Charging Damage On 30/spl Aring/ Gate Oxide Antenna MOS Capacitor Structure During Polysilicon Gate Etch
Author
Ma, Shawming ; Chi, Chiu ; Bayoumi, Amr ; Langley, Brian ; Cao, Min ; Marcoux, Paul ; Greene, Wayne ; Ray, Gary
Author_Institution
ULSI Research Laboratory
fYear
1997
fDate
13-14 May 1997
Firstpage
25
Lastpage
28
Keywords
Diodes; Etching; Leakage current; MOS capacitors; Plasma applications; Plasma chemistry; Plasma devices; Plasma measurements; Plasma sources; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location
Monterey, California, USA
Print_ISBN
0-9651-5771-7
Type
conf
DOI
10.1109/PPID.1997.596673
Filename
596673
Link To Document