Characterization of silicon detectors with thin dead-layers on the n-side

Author

Avset, B.S. ; Chesi, E. ; Evensen, L. ; Jensen, G.U. ; Martinengo, P. ; Mo, S. ; Seguinot, J. ; Weilhammer, P. ; Westgaard, T.

Author_Institution

SINTEF Electron. & Cybern., Oslo, Norway

fYear

1997

fDate

9-15 Nov 1997

Firstpage

308

Abstract

Low energy electrons, alpha particles and X-rays has a short penetration depth in silicon. For detection of these types of radiation it is important that the detector has a shallow inactive region at the side which is irradiated. A series of shallow dead layer test detectors produced by n-side implantation of phosphorus, arsenic or antimony has been characterized. Leakage current levels in the range 2-5 nA/cm² were achieved with dead layers in the range 0.1-0.2 μm. A silicon pixel detector which will be used in a hybrid photon detector has been produced with thin dead layer technology. The lower detection limit for electrons with this detector is 2.5 keV

Keywords

X-ray detection; alpha-particle detection; electron detection; silicon radiation detectors; 2.5 keV; As; P; Sb; Si detectors; X-rays; alpha particles; antimony; arsenic; hybrid photon detector; leakage current levels; low energy electrons; lower detection limit; n-side; n-side implantation; penetration depth; phosphorus; shallow dead layer test detectors; shallow inactive region; silicon detectors; silicon pixel detector; thin dead-layers; Bonding; Contacts; Electrical resistance measurement; Electrons; Implants; Leak detection; Leakage current; Radiation detectors; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672591

Filename

672591