DocumentCode
310869
Title
Effect Of Gate Oxide Thickness On Charging Damage In PIII
Author
En, William G. ; Bell, Scott ; Linder, Barry ; Cheung, Nathan W.
Author_Institution
Advanced Micro Devices
fYear
1997
fDate
13-14 May 1997
Firstpage
161
Lastpage
164
Keywords
Analytical models; MOSFET circuits; Plasma accelerators; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma simulation; Plasma sources; SPICE; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location
Monterey, California, USA
Print_ISBN
0-9651-5771-7
Type
conf
DOI
10.1109/PPID.1997.596729
Filename
596729
Link To Document