DocumentCode
310891
Title
Degradation Of Silicon Dioxide Film Under High Electric Field Stress
Author
Yamabe, Kikuo
Author_Institution
University of Tsukuba
fYear
1997
fDate
13-14 May 1997
Firstpage
243
Lastpage
246
Keywords
Annealing; Degradation; Electric breakdown; Electrodes; Leakage current; MOS capacitors; Plasma temperature; Semiconductor films; Silicon compounds; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location
Monterey, California, USA
Print_ISBN
0-9651-5771-7
Type
conf
DOI
10.1109/PPID.1997.596760
Filename
596760
Link To Document