• DocumentCode
    3109056
  • Title

    Prediction of HBT ACPR using the Gummel Poon large signal model

  • Author

    Teeter, D.A. ; Bouthillette, S. ; Platzker, A. ; Forbes, A. ; Lichwala, S.

  • Author_Institution
    Adv. Device Center, Raytheon Electron., Andover, MA, USA
  • fYear
    1997
  • fDate
    12-15 Oct. 1997
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    The ability of the Gummel Poon model to predict HBT ACPR is investigated. It is shown that with proper parameter extraction, the Gummel Poon model is capable of predicting ACPR for NADC and O-QPSK CDMA. Several examples of measured versus modeled performance are given along with a detailed discussion of the parameter extraction methodology.
  • Keywords
    heterojunction bipolar transistors; power amplifiers; radio equipment; semiconductor device models; ACPR; Gummel Poon large signal model; HBT; NADC; O-QPSK CDMA; RF power transistor amplifier; linearity; parameter extraction; Current measurement; Heterojunction bipolar transistors; Impedance; Parameter extraction; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Tuners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
  • Conference_Location
    Anaheim, CA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-4083-3
  • Type

    conf

  • DOI
    10.1109/GAAS.1997.628233
  • Filename
    628233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3109056