DocumentCode
3109089
Title
Multi-octave GaN MMIC amplifier
Author
Darwish, Ali M. ; Hung, H. Alfred ; Viveiros, Edward ; Kao, Ming-Yih
Author_Institution
Army Res. Lab., Adelphi, MD, USA
fYear
2010
fDate
23-28 May 2010
Firstpage
141
Lastpage
144
Abstract
A broadband multi-octave, 0.1 - 20 GHz, 10 dB ±2 dB amplifier was implemented in the GaN/SiC technology. The amplifier design relies on a series DC/RF HEMTs (SHEMTS) configuration. This configuration offers an alternative to the traveling wave amplifier (TWA), uses a smaller chip area, and readily extends the gain to the low frequency region. The amplifier is power matched at Ku-band and has an output power of 1 W at 1-dB compression, 17 GHz, and 17% drain efficiency.
Keywords
HEMT circuits; MMIC amplifiers; gallium compounds; silicon compounds; travelling wave amplifiers; DC/RF HEMT; GaN; GaN/SiC technology; SiC; broadband multi-octave; multi-octave GaN MMIC amplifier; traveling wave amplifier; Broadband amplifiers; Gallium nitride; HEMTs; MMICs; MODFETs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon carbide; Gallium nitride; HiFET; S-HEMT; broadband amplifier; multi-octave; traveling wave amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5515885
Filename
5515885
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