GaAs ICs for 10 Gb/s ATM switching

Author

Nunez, A. ; Sarmiento, R. ; Esper-Chain, R. ; Jakobsen, J. ; Montiel-Nelson, J.A. ; Lopez, J. ; Armas, V. ; Tobajas, F.

Author_Institution

CMA, Univ. of Las Palmas de Gran Canaria, Spain

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

101

Lastpage

104

Abstract

This paper reports on work done by project GARDEN under EU ESPRIT Research Programme in the past three years for developing ATM line units and ATM switch fabric operating at 2.5 Gb/s, and ongoing work for system upgrading to 10 Gb/s operation. A circuit of each type of unit is presented. This project has required the detailed specification of the system architecture, partitioning, interconnection, and technology mapping of the ATM functions into different chips, the development of full custom layout methodology and tools for MESFET HGaAs III, IV and HEMT technologies, and the actual design, fabrication and test of a set of IC´s performing physical layer, ATM layer, buffering and switching functions.

Keywords

HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; asynchronous transfer mode; electronic switching systems; gallium arsenide; 10 Gbit/s; ATM switching; EU ESPRIT Research Programme; GARDEN project; GaAs; GaAs IC; HEMT; MESFET; buffering function; full custom layout; interconnection; partitioning; system architecture; technology mapping; Asynchronous transfer mode; Fabrication; Fabrics; Gallium arsenide; HEMTs; Integrated circuit interconnections; Integrated circuit layout; MESFET integrated circuits; Switches; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628247

Filename

628247