Effects of electrostatic discharge on GaAs-based HBTs

Author

Henderson, T.

Author_Institution

TI Syst. MMIC R&D, Raytheon, Dallas, TX, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

147

Lastpage

150

Abstract

Short term and long term effects of electrostatic discharge (ESD) on GaAs-based HBTs are described. Both single-finger and multi-finger devices were tested, at ESD levels from 300 to 8000 V. Typically, devices subject to ESD show increasing levels of leakage current and/or decreased breakdown voltages. ESD effects on single and multi-finger devices are discussed, as well as the effects of ballasting. Finally, the results of long-term bias stress on ESD exposed devices is described.

Keywords

III-V semiconductors; electric breakdown; electrostatic discharge; gallium arsenide; heterojunction bipolar transistors; leakage currents; 300 to 8000 V; GaAs; GaAs HBT; ballast; bias stress; breakdown voltage; electrostatic discharge; leakage current; multi-finger device; single-finger device; Degradation; Electronic ballasts; Electrostatic discharge; Fingers; Gallium arsenide; Heterojunction bipolar transistors; L-band; Schottky diodes; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628258

Filename

628258

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3109779