Towards high-performance > 100 GHz SiGe and CMOS circuits

Author

Rebeiz, Gabriel M. ; May, Jason ; Uzunkol, Mehmet ; Shin, Woorim ; Inac, Ozgur ; Chang, Mingchao

Author_Institution

Univ. of California, La Jolla, CA, USA

fYear

2010

fDate

23-28 May 2010

Firstpage

1320

Lastpage

1323

Abstract

This paper presents SiGe and CMOS circuits with > 100 GHz operation. The goal is to show that SiGe can be used for imaging systems due to its low 1/f noise properties. A W-band SiGe imaging chip is presented with performance which is nearly as good as the best InP chips. Another goal is to show that deep-scaled CMOS can result in high performance amplifiers, detectors, and doublers at 90-110 GHz and at 180-220 GHz. The applications areas are in high data-rate communications, > 100 GHz automotive radars (140 and 220 GHz) and mm-wave imaging systems.

Keywords

1/f noise; CMOS integrated circuits; Ge-Si alloys; MIMIC; millimetre wave imaging; semiconductor materials; 1/f noise; InP chips; SiGe; W-band SiGe imaging chip; automotive radars; deep-scaled CMOS circuits; detectors; doublers; frequency 180 GHz to 220 GHz; frequency 90 GHz to 110 GHz; high data-rate communications; high performance amplifiers; mm-wave imaging systems; Automotive engineering; Broadband amplifiers; Circuits; Detectors; Germanium silicon alloys; Interference; Radar applications; Radar imaging; Silicon germanium; Wideband; CMOS; D-band; SiGe; W-band; communications; imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5515917

Filename

5515917