Degradation effects induced by hot carrier and high channel temperature in pseudomorphic GaAs millimeter wave power HEMT´s

Author

Chou, Y.C. ; Li, G.P. ; Leung, D. ; Wang, Z.Y. ; Chen, Y.C. ; Lai, R. ; Wu, C.S. ; Kono, R. ; Liu, P.H. ; Scarpulla, J. ; Streit, D.C.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

165

Lastpage

168

Abstract

Degradation effects by hot carrier (HCID) and high channel temperature (HCT) are investigated for millimeter wave power HEMT´s with a gate length of 0.1 /spl mu/m and 0.15 /spl mu/m. While both HCID and HCT induce drain current reduction, they post distinct failure mechanisms. Our hypothesis is that carrier density reduction under the gate contact which results in I/sub ds/ decrease might account for HCID and gate metal sinking is caused by HCT.

Keywords

III-V semiconductors; carrier density; failure analysis; gallium arsenide; hot carriers; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power field effect transistors; semiconductor device reliability; 0.1 micron; 0.15 micron; EHF; GaAs; MM-wave power HEMT; carrier density reduction; degradation effects; drain current reduction; failure mechanisms; gate contact; gate metal sinking; high channel temperature; hot carrier; millimeter wave HEMT; pseudomorphic power HEMT; Charge carrier density; Degradation; Electric breakdown; Failure analysis; Frequency; Gallium arsenide; Hot carriers; MMICs; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628261

Filename

628261