Sacrificial oxide etching compatible with aluminum metallization

Author

Gennissen, P.T.J. ; French, P.J.

Author_Institution

Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

225

Abstract

This paper reports on sacrificial oxide etching with very high selectivity to aluminum metallization using mixtures of 73% HF and IPA. Etch rate ratios up to 680 have been achieved even for (slow etching) thermal oxide. Thermal oxide etch rates up to 1.8 μm/min. are reported. Thick polysilicon accelerometers with aluminum metallization and thermal sacrificial oxide have been made as well as full aluminum microstructures using plasma oxide as sacrificial layer

Keywords

accelerometers; aluminium; elemental semiconductors; etching; integrated circuit metallisation; micromachining; microsensors; semiconductor device metallisation; silicon; Al; Al metallization compatibility; Al microstructures; Al-SiO₂-Si; HF; HF-IPA mixtures; etch rate ratio; etch selectivity; plasma oxide sacrificial layer; sacrificial oxide etching; slow etching; surface micromachining; thermal oxide; thick polysilicon accelerometers; Accelerometers; Aluminum; Dry etching; Hafnium; Instruments; Laboratories; Metallization; Protection; Resists; Surface tension;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613624

Filename

613624