GaAs driver and sensor for a high speed system

Author

Tsai, Sheng-Jen ; Hechtman, Charles D.

Author_Institution

AT&T Eng. Res. Center, Princeton, NJ, USA

fYear

1988

fDate

12-14 Sep 1988

Firstpage

13

Lastpage

22

Abstract

The circuitry of a GaAs driver/sensor device was presented. The specific features that it possesses and the design issues were discussed. The device was prototyped using MMIC (monolithic microwave integrated circuit) techniques and packaged in hybrid form. Experimental results indicated that its performance well exceeded the designated goal at 100 MHz. After intensive SPICE simulations confirmed the functional and timing characteristics of the driver and sensor, the design was then laid out. All components except the Zener diodes were embedded inside the chips. Silicon Zener diodes were used instead of their GaAs counterparts to obtain better accuracy of the Zener voltage. The overall gate width of the driver circuit is greater than the upper limit specified by the foundry design rules, and the driver is partitioned into three chips

Keywords

III-V semiconductors; MMIC; Zener diodes; digital simulation; driver circuits; electric sensing devices; gallium arsenide; hybrid integrated circuits; test equipment; 100 MHz; GaAs driver; SPICE simulations; Si; Zener diodes; Zener voltage; electric sensing devices; functional characteristics; high speed system; monolithic microwave integrated circuit; timing characteristics; Diodes; Driver circuits; Gallium arsenide; Hybrid integrated circuits; MMICs; Microwave devices; Microwave integrated circuits; Microwave theory and techniques; Prototypes; Sensor systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Conference, 1988. Proceedings. New Frontiers in Testing, International

Conference_Location

Washington, DC

ISSN

1089-3539

Print_ISBN

0-8186-0870-6

Type

conf

DOI

10.1109/TEST.1988.207775

Filename

207775