Novel high power distributed amplifiers

Two novel techniques for high-power GaAs distributed amplifiers in the 2-20-GHz frequency range are compared. The details of these circuits are discussed, and their performances are compared using SPICE-2. In this comparison, the factors degrading the gain and power performances of these amplifiers are taken into account. These approaches are more suitable for obtaining high-power at microwave frequencies using MIC or MMIC technology. In both cases GaAs FETs are used as the active elements. It is observed that the second configuration is more efficient in regard to the number of active devices used, and therefore the DC power, but because of practical consideration and the better match at the connecting point of the two parts, the first configuration can achieve more bandwidth