InAsSb and InPSb materials for mid infrared photodetectors

Author

Lackner, D. ; Pitts, O.J. ; Martine, M. ; Cherng, Y.T. ; Mooney, P.M. ; Thewalt, M.L.W. ; Plis, E. ; Watkins, S.P.

Author_Institution

Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

III-V semiconductor materials are under active investigation for use as optical detectors in the mid infrared wavelength region from 3 to 12 μm. In this paper we summarize recent progress on the development of III-V materials for this application based on the material InAsSb. We first present the results of investigations in the use of strained balanced type II superlattices of InAsSb/InAs to extend the absorption wavelength of this material system beyond the limits of the maximum InAsSb bulk value. We present results on the growth of InPSb heterojunction structures with the aim of reducing thermal diffusion current and surface leakage. Finally we present some preliminary device results indicating the promise of this material system.

Keywords

III-V semiconductors; indium compounds; infrared detectors; leakage currents; photodetectors; semiconductor superlattices; thermal diffusion; III-V semiconductor; InAsSb; InAsSb-InAs; InPSb; absorption wavelength; heterojunction structure; midinfrared photodetectors; optical detectors; strained balanced type II superlattice; surface leakage; thermal diffusion current; wavelength 3 mum to 12 mum; Absorption; Heterojunctions; III-V semiconductor materials; Infrared detectors; Optical detectors; Optical materials; Optical surface waves; Photodetectors; Semiconductor materials; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5515974

Filename

5515974