Hydrofluoric acid modifications of graphene films

Author

Nebogatikova, Nadezhda A. ; Antonova, Irina V. ; Prinz, Victor Ya

Author_Institution

A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

80

Lastpage

82

Abstract

In the present work, we report on fluorination of multilayer graphene by means of HF treatment, which results in dramatic changes in its structural and electrical properties. This statement is based on transport measurements, Raman spectroscopy and atomic force electron microscopy. It is found that the local regions of fluorographene appear on the graphene films surface after hydrofluoric acid treatment of few layer graphene. Fluorine ions are found to require for the fluorination reactions. Periodic nanoswell relief with 100 nm and 10 nm in diameter and height respectively had formed on the surface of graphene films after the HF treatment.

Keywords

Raman spectra; atomic force microscopy; electrical resistivity; electron microscopy; graphene; multilayers; nanostructured materials; surface treatment; thin films; CF; Raman spectroscopy; atomic force electron microscopy; electrical properties; electrical resistivity; fluorination; hydrofluoric acid modifications; multilayer graphene films; periodic nanoswell relief; size 10 nm; size 100 nm; structural properties; Atomic measurements; Films; Microscopy; Photonic band gap; Silicon; Surface treatment; Temperature measurement; Graphene; fluorination; functionalization; periodic nanos-well relief;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006900

Filename

6006900