Ka- and W-band MMICs on microwave and millimeterwave device arrays (MMDA) using 0.1 /spl mu/m T-gate PHEMT

Author

Mondal, Jayant ; Dietz, G. ; Peterson, K. ; Haubenstricker, R. ; McReynolds, K. ; Laux, P. ; Moghe, S. ; Rice, P. ; Aina, L.

Author_Institution

Northrop Grumman Corp., Rolling Meadows, IL, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

279

Lastpage

282

Abstract

A variety of Ka- and W-Band MMICs have been developed on common sets of Microwave and Millimeter-wave Device Arrays (MMDA) using a 0.1 /spl mu/m T-gate process. The MMDA approach, similar to digital gate array techniques, has the potential to reduce the cost and cycle time (CCT) of high performance MMIC insertions in low-to-medium volume systems. Various types of MMICs, designed on the same sets of MMDA, have a wide performance range; LO power of 18-19 dBm in Ka-band, oscillator power of 16-18 dBm in Ka band, mixer conversion loss of 10-12 dB in Ka- and W-bands, doubler of 46 to 92 GHz with 9 dBm power at 92 GHz.

Keywords

HEMT integrated circuits; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; MMIC oscillators; arrays; field effect MIMIC; field effect MMIC; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave mixers; millimetre wave oscillators; 0.1 micron; 10 to 12 dB; 30 to 92 GHz; EHF; GaAs; Ka-band MMICs; MIMIC; SHF; T-gate PHEMT; W-band MMICs; doubler; microwave/millimeterwave device arrays; mixer conversion loss; oscillator power; Costs; Design methodology; MMICs; Microwave antenna arrays; Microwave devices; Millimeter wave devices; Oscillators; PHEMTs; Performance loss; Prototypes;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628286

Filename

628286