DocumentCode
3111414
Title
Monte Carlo model of GaAs nanowhisker growth
Author
Knyazeva, Maria V. ; Nastovjak, Alla G. ; Shwartz, Nataliya L.
Author_Institution
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear
2011
fDate
June 30 2011-July 4 2011
Firstpage
111
Lastpage
113
Abstract
GaAs nanowhisker growth according to vapor-liquid-solid mechanism was realized on the basis of the lattice Monte Carlo model. Different solubility of Ga and As atoms in Au drop was taken into account in the model. Nanowhisker growth on GaAs(111)B surface activated by golden drops was demonstrated.
Keywords
III-V semiconductors; Monte Carlo methods; gallium arsenide; gold; nanofabrication; nanostructured materials; semiconductor growth; solid-liquid transformations; solid-vapour transformations; solubility; whiskers (crystal); Au; GaAs; GaAs(111)B surface; golden drops; lattice Monte Carlo model; nanowhisker growth; solubility; vapor-liquid-solid mechanism; Atomic layer deposition; Gallium; Gallium arsenide; Gold; Monte Carlo methods; Nanowires; Surface treatment; GaAs; Monte Carlo; nanowhisker;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location
Erlagol, Altai
Print_ISBN
978-1-61284-793-1
Type
conf
DOI
10.1109/EDM.2011.6006908
Filename
6006908
Link To Document