DocumentCode
3112348
Title
Simulation of the small-signal performance of a HEMT using a distributed model
Author
Martin-Guerrero, Teresa M. ; Camacho-Peñalosa, C.
Author_Institution
Dept. de Ingenieria de Comunicaciones, Malaga Univ., Spain
Volume
1
fYear
1996
fDate
13-16 May 1996
Firstpage
567
Abstract
A distributed model developed for MESFETs is applied to the simulation of the small-signal behaviour of a HEMT in the 1-50 GHz frequency range. The model has been used to simulate the behaviour of the HEMT for a wide variety of bias conditions in order to investigate their influence on the elements of the distributed model. The results obtained suggest that the bias dependence of the HEMT distributed model elements is more complicated than that of MESFET devices
Keywords
high electron mobility transistors; microwave field effect transistors; semiconductor device models; 1 to 50 GHz; HEMT; bias dependence; distributed model; simulation; small-signal performance; Admittance; Circuit simulation; Equivalent circuits; Fitting; HEMTs; MESFETs; Magnetic devices; Roentgenium; Scattering parameters; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location
Bari
Print_ISBN
0-7803-3109-5
Type
conf
DOI
10.1109/MELCON.1996.551603
Filename
551603
Link To Document