Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD

Epitaxial growth of GaP on a Si substrate with a GaInP interlayer by a low-pressure metalorganic chemical vapor deposition were investigated using the atomic force microscopy. The surface roughness Ra was decreased from 2.7 nm to 1.3 nm by only inserting the GaInP interlayer under the 600°C. The GaP layer using the GaInP interlayer was optimized under various growth temperature between 500°C and 650°C. The surface roughness Ra was drastically decreased to 0.5 nm when both the GaP and the GaInP interlayer was grown at 550°C.