Effect of ITC on the characteristics of junctionless nanowire transistor(JLNWT) for future ULSI applications: Semianalytical modeling approach

Junctionless Nanowire Transistor (JLNWT) is now being considered one of the most attractive and deserving candidate for future ULSI applications due to its high current driving capability and better SCEs immunity. In this paper, a semi-analytical subthreshold current model has been developed for short channel JLNWT including interface trap charges (ITC) density. This paper explores the electrical performance degradation of JLNWT due to fixed/interface trap charges. Effect of extension, position, density and polarity of interface trap charges are discussed in terms of change in electrical parameters of JLNWT such as central potential, threshold voltage roll-off, subthreshold slope, drain induced barrier lowering and subthreshold current. Impact of technology variation such as channel length, silicon film radius has been carried out in the details. Model verified by using ATLAS 3D device simulator. Results reveal that ITC significantly affects the sensitivity of Junctionless NWT and is more noxious at subthreshold region.