• DocumentCode
    3113522
  • Title

    Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

  • Author

    Chen, Peng ; Wong, Ka Ming ; Lau, Kei May ; Lau, S.S.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
  • fYear
    2009
  • fDate
    13-17 July 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Functioning InP/InGaAs/InP p-i-n photodiodes, initially grown on an InP substrate, were transferred onto a SiO2/Si substrate using the combination of ion-cutting and selective chemical etching. Effects of hydrogen-induced defects on transferred devices are discussed.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n photodiodes; wafer bonding; InP-InGaAs-InP; SiO2-Si; hydrogen-induced layer exfoliation; ion-cutting; p-i-n photodiodes; selective chemical etching; wafer bonding; Annealing; Etching; Hydrogen; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Silicon; Substrates; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-4102-0
  • Electronic_ISBN
    978-1-4244-4103-7
  • Type

    conf

  • DOI
    10.1109/OECC.2009.5214562
  • Filename
    5214562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3113522