DocumentCode
3113800
Title
Selective etching and polymer deposition on InP surface in CH4 /H2 -RIE
Author
Yamamoto, Norio
Author_Institution
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear
2010
fDate
May 31 2010-June 4 2010
Firstpage
1
Lastpage
4
Abstract
We conducted a preliminary study of selective etching and polymer deposition for fabricating Bragg gratings with varied depths in InP by using reactive ion etching (RIE) with methane (CH4). We obtained selectivity in a submicrometer-pitch grating: the InP was etched in the window of the grating in the region with a thick layer, while it was not etched and polymer was deposited in the region without the thick layer. We also found that the selectivity depends on the plasma pressure in RIE.
Keywords
Bragg gratings; III-V semiconductors; indium compounds; semiconductor growth; sputter etching; Bragg gratings; InP; methane; polymer deposition; reactive ion etching; selective etching; submicrometer-pitch grating; Bragg gratings; Etching; Hydrogen; Indium phosphide; Optical device fabrication; Optical devices; Plasma applications; Plasma chemistry; Polymers; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location
Kagawa
ISSN
1092-8669
Print_ISBN
978-1-4244-5919-3
Type
conf
DOI
10.1109/ICIPRM.2010.5516100
Filename
5516100
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