• DocumentCode
    3113800
  • Title

    Selective etching and polymer deposition on InP surface in CH4/H2-RIE

  • Author

    Yamamoto, Norio

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • fYear
    2010
  • fDate
    May 31 2010-June 4 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We conducted a preliminary study of selective etching and polymer deposition for fabricating Bragg gratings with varied depths in InP by using reactive ion etching (RIE) with methane (CH4). We obtained selectivity in a submicrometer-pitch grating: the InP was etched in the window of the grating in the region with a thick layer, while it was not etched and polymer was deposited in the region without the thick layer. We also found that the selectivity depends on the plasma pressure in RIE.
  • Keywords
    Bragg gratings; III-V semiconductors; indium compounds; semiconductor growth; sputter etching; Bragg gratings; InP; methane; polymer deposition; reactive ion etching; selective etching; submicrometer-pitch grating; Bragg gratings; Etching; Hydrogen; Indium phosphide; Optical device fabrication; Optical devices; Plasma applications; Plasma chemistry; Polymers; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
  • Conference_Location
    Kagawa
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-5919-3
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2010.5516100
  • Filename
    5516100