The Hitachi advanced implanter UI-6000 for SIMOX wafer production

Author

Tokiguchi, K. ; Seki, T. ; Itou, J. ; Kitazawa, S. ; Sato, T. ; Mera, K. ; Hashimoto, I. ; Yoshikawa, A.

Author_Institution

Lab. of Power & Ind. Syst. R&D, Hitachi Ltd., Ibaraki, Japan

fYear

2000

fDate

2000

Firstpage

372

Lastpage

375

Abstract

To produce high quality SIMOX wafers of 200 mm or 300 mm in diameter with high throughput, an oxygen ion implanter, UI-6000, was newly designed and constructed. The implanter operated stably at the wafer temperatures of 500 to 650 °C and gave 100 mA-class O⁺ current in the energy regions required for the low-dose SIMOX wafer fabrication process. The implant test showed that the clean and uniform implantation needed for next generation SIMOX-SOI device fabrication can be successfully realized with the UI-6000

Keywords

SIMOX; ion implantation; semiconductor device manufacture; wafer-scale integration; 100 mA; 200 mm; 300 mm; 650 to 500 degC; Hitachi; O⁺ current; SIMOX wafer production; SIMOX-SOI device fabrication; Si:O; UI-6000; advanced O ion implanter; implant test; ion implantation technology; low-dose fabrication process; uniform implantation; wafer temperature; Data mining; Electrodes; Fabrication; Implants; Ion beams; Ion sources; Manufacturing industries; Optical beams; Production; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924165

Filename

924165