EMC characterization for switching noise investigation on power transistors

Author

Batista, Emmanuel ; Dienot, Jean-Marc

Author_Institution

Power Electron. Assoc. Res. Lab., Alstom Transp., Semeac

fYear

2008

fDate

18-22 Aug. 2008

Firstpage

1

Lastpage

7

Abstract

This paper proposes a complete characterization approach for switching noise effects study on a new electromagnetic compatibility (EMC) multi-domain problematic with electronics embedded systems, mixing power components and integrated circuits in common volumes. In this context EMC 3D couplings effects, i.e. between power converter chip (MosPower, insulated gate bipolar transistor (IGBT)) and digital printed circuit board (PCB) with pulse width modulation (PWM) pattern, take place in more and more wide range of frequency, as 1 kHz - 1 GHz. Based on a general methodology called XVICE, the modeling approach is also presented.

Keywords

electromagnetic compatibility; power integrated circuits; power transistors; 3D couplings effects; EMC characterization; IGBT; PWM pattern; digital printed circuit board; electromagnetic compatibility multidomain; electronics embedded systems; frequency 1 kHz to 1 GHz; insulated gate bipolar transistor; integrated circuits; power converter chip; power transistors; pulse width modulation pattern; switching noise investigation; Coupling circuits; Electromagnetic compatibility; Electromagnetic compatibility and interference; Embedded system; Insulated gate bipolar transistors; Integrated circuit noise; Power transistors; Pulse width modulation; Pulse width modulation converters; Switching circuits; Computer modelling; EMC Couplings; Emission; Power Transistors (IGBT); Switching noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2008. EMC 2008. IEEE International Symposium on

Conference_Location

Detroit, MI

Print_ISBN

978-1-4244-1699-8

Electronic_ISBN

978-1-4244-1698-1

Type

conf

DOI

10.1109/ISEMC.2008.4652057

Filename

4652057