• DocumentCode
    3114183
  • Title

    Propagation of delay faults caused by resistive open faults with dynamic voltage scaling awareness

  • Author

    Mohammadat, Mohamed Tag Elsir ; Ali, Noohul Basheer Zain ; Hussin, Fawnizu Azmadi

  • Author_Institution
    Electr. & Electron. Eng. Dept., Univ. Teknol. PETRONAS, Tronoh, Malaysia
  • fYear
    2011
  • fDate
    19-20 Sept. 2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Fault Diagnosis is important step in detecting manufacturing process problems and improving its quality. Characterizing the effect of faults on the performance of circuits is essential in diagnosing and testing faulty chips. Resistive opens are common manufacturing faults which affect the timing performance of circuits. In dynamic voltage scaling environment, the supply voltage and clock frequency are dynamically adjusted to meet the processing demands. With this awareness, we previously demonstrated that the delay caused by resistive opens as the VDD increases show different increment and decrement patterns depending on the range of the open resistance value. However, the path delay in CMOS circuits increases exponentially with reduced VDD. In this work, we investigate how the delay of the opens is propagated through the CMOS circuit. We show how this behavior is manifested with the aid of simulation on benchmark circuits based on 130nm technology model as well as 65nm, 22nm and 16nm Berkeley Predictive Technology Models (BPTM). Based on this observation and to ease fault related work on resistive open faults, we proposed dividing the full range of opens resistances into smaller subsets of resistance intervals.
  • Keywords
    CMOS integrated circuits; fault simulation; integrated circuit testing; Berkeley Predictive Technology Models; CMOS circuits; benchmark circuits; clock frequency; delay fault propagation; dynamic voltage scaling awareness; dynamic voltage scaling environment; fault diagnosis; faulty chips; manufacturing faults; manufacturing process problems; open resistance value; resistive open faults; size 130 nm; size 16 nm; size 22 nm; size 65 nm; supply voltage; timing performance; CMOS integrated circuits; Circuit faults; Delay; Integrated circuit modeling; Propagation delay; Resistance; Semiconductor device modeling; Dynamic Voltage Scaling (DVS); Open Resistance Intervals; Resistive Open Fault (ROF); Resistive Open Fault Delay;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    National Postgraduate Conference (NPC), 2011
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4577-1882-3
  • Type

    conf

  • DOI
    10.1109/NatPC.2011.6136430
  • Filename
    6136430