Performance characteristics of the Varian VIISta 810 single wafer medium current ion implanter

Author

Renau, A. ; Scheuer, J.T. ; Brennan, D. ; Todorov, S.S. ; Cucchetti, A. ; Olson, J.C.

Author_Institution

Varian Semicond. Equip. Associates Inc., Gloucester, MA, USA

fYear

2000

fDate

2000

Firstpage

435

Lastpage

438

Abstract

The design of the VSIIta 810 medium current implanter successfully addresses the needs of advanced semiconductor manufacturing by meeting the challenges of high productivity and reduced defect density. Data are presented verifying that the beamline design reduces the risk of defect production from particulate and metallic contamination while ensuring energy parity. Tuning time, reliability, dose uniformity and repeatability data demonstrate high productivity of the VIISta 810 for a wide range of energies, charge states and implant species for 200 mm and 300 mm wafers

Keywords

beam handling equipment; ion beam applications; ion implantation; Varian VIISta 810; advanced semiconductor manufacturing; beamline design; defect density; dose uniformity; energy parity; metallic contamination; particulate contamination; reliability; repeatability; single wafer medium current ion implanter; tuning time; Contamination; Filtering; Hardware; Implants; Ion sources; Monitoring; Production systems; Productivity; Semiconductor device manufacture; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924181

Filename

924181