DocumentCode
3114292
Title
Proposal of multi-wavelength integration of athermal GaAs VCSEL array with thermally actuated cantilever structure
Author
Nakata, Norihiko ; Sano, Hayato ; Matsutani, Akihiro ; Koyama, Fumio
Author_Institution
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear
2010
fDate
May 31 2010-June 4 2010
Firstpage
1
Lastpage
4
Abstract
We propose a multi-wavelength and athermal VCSEL array with thermally-actuated cantilevers. The lithography-defined cantilever structure enables on-chip multi-wavelength integration. The experiment shows the wavelength spacing of 20 nm for 2-ch VCSEL array with different cantilever lengths.
Keywords
III-V semiconductors; cantilevers; gallium arsenide; integrated optics; lithography; optical fabrication; semiconductor laser arrays; surface emitting lasers; GaAs; athermal VCSEL array; lithography defined cantilever structure; on chip multiwavelength integration; thermally actuated cantilever structure; Gallium arsenide; Micromechanical devices; Optical interconnections; Proposals; Stress control; Surface emitting lasers; Temperature dependence; Thermal expansion; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location
Kagawa
ISSN
1092-8669
Print_ISBN
978-1-4244-5919-3
Type
conf
DOI
10.1109/ICIPRM.2010.5516120
Filename
5516120
Link To Document