Low-cost 2DEG magnetic sensor with metrological performances for magnetic field and current sensing

Author

Mosser, V. ; Kobbi, F. ; Contreras, S. ; Mercy, J.-M. ; Callen, O. ; Robert, J.L. ; Aboulhouda, S. ; Chevrier, J. ; Adam, D.

Author_Institution

Schlumberger-ETL, Montronge, France

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

401

Abstract

We have developed Hall sensors featuring a two-dimensional electron gas (2DEG) in a AlGaAs/InGaAs/GaAs delta-doped heterostructure. They show a large sensitivity (750 V/A/T), a low thermal drift (-140 ppm/°C), an excellent linearity vs. magnetic field. Their gain and offset have a very stable behavior under temperature cycling, making them well-suited for current sensing. They are practically free from backgating induced pinch-off effects, which makes them suitable for power measurement. All these characteristics are reproducible within a few percents from run to run

Keywords

Hall effect devices; III-V semiconductors; aluminium compounds; electric current measurement; gallium arsenide; indium compounds; magnetic sensors; microsensors; power measurement; semiconductor heterojunctions; semiconductor superlattices; semiconductor technology; two-dimensional electron gas; 2D electron gas; 2D magnetic sensor; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs delta-doped heterostructure; GaAs; III-V heterostructure; backgating; current sensing; gain; linearity; magnetic field sensing; offset; pinch-off effects; power measurement; sensitivity; temperature cycling; thermal drift; Electrons; Gallium arsenide; Gas detectors; Indium gallium arsenide; Linearity; Magnetic field measurement; Magnetic sensors; Molecular beam epitaxial growth; Power measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613669

Filename

613669