• DocumentCode
    3116101
  • Title

    Modelling of metal degradation in power devices under active cycling conditions

  • Author

    Kanert, W. ; Pufall, R. ; Wittler, O. ; Dudek, R. ; Bouazza, M.

  • Author_Institution
    Infineon Technol. AG, Neubiberg, Germany
  • fYear
    2011
  • fDate
    18-20 April 2011
  • Firstpage
    42375
  • Lastpage
    42527
  • Abstract
    Metal degradation has recently received increased attention as a failure mechanism in power devices under active cycling conditions, i.e. under repeated pulsed voltage/current loads. Both electro-thermal and thermo-mechanical simulation are indispensable for understanding this mechanisms. The paper presents experimental and simulation data for a dedicated test structure. A suitable lifetime model has to go beyond a simple Coffin-Manson type model to capture the essential influencing parameters.
  • Keywords
    failure analysis; power MOSFET; semiconductor device reliability; Coffin-Manson type model; active cycling conditions; electro-thermal simulation; failure mechanism; metal degradation; power MOSFET; power devices; thermo-mechanical simulation; Atmospheric modeling; Degradation; Electromigration; Lead; Switches; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on
  • Conference_Location
    Linz
  • Print_ISBN
    978-1-4577-0107-8
  • Type

    conf

  • DOI
    10.1109/ESIME.2011.5765771
  • Filename
    5765771