Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

Author

Medjdoub, F. ; Theron, D. ; Dessenne, F. ; Fauquembergue, R. ; De Jaeger, J.C.

Author_Institution

IEMN, Villeneuve d´´Ascq, France

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

57

Lastpage

62

Abstract

This paper deals with the evaluation of AlInAs/GaInAs HEMTs (high electron mobility transistors) with an InP etch stop layer (IESL) for power applications in the millimeter and submillimeter wave ranges. We use a 2D Monte Carlo model in order to analyze the capability of the device to handle high voltage with small gate length.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium compounds; impact ionisation; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor device breakdown; semiconductor device models; submillimetre wave transistors; 2D Monte Carlo models; AlInAs-GaInAs-InP; AlInAs/GaInAs HEMT breakdown; IESL; InP etch stop layers; high electron mobility transistors; high voltage operation; impact ionization; power HEMT applications; small device gate length; sub-millimeter wave transistors; Acoustic scattering; Electric breakdown; Electrons; Etching; HEMTs; Impact ionization; Indium phosphide; Monte Carlo methods; Optical scattering; Particle scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174930

Filename

1174930