A design of DC-2 GHz linear-controlled CMOS attenuator

Author

Yoo, B.G. ; Huh, J.H. ; Kim, S.W.

Author_Institution

Dept. of Electron. Eng., Korea Univ., Seoul, South Korea

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

107

Lastpage

110

Abstract

To reaffirm the use of a mainstream CMOS process for designing passive-like attenuator structures, a linear-controlled variable attenuator is realized with a 0.35 μm CMOS process, which covers the broad frequency band (DC-1 GHz). Compared to existing passive-like CMOS attenuators, it is demonstrated that this work advances the frequency band from MHz to GHz, and reduces the size. To elevate the limit of bandwidth, an alternative topology, which covers DC-2 GHz, is proposed as well. The operation principle and its characteristics are explained in detail.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; attenuators; circuit feedback; circuit simulation; integrated circuit design; integrated circuit measurement; integrated circuit modelling; 0 Hz to 1 GHz; 0 Hz to 2 GHz; 0.35 micron; CMOS process; IC size reduction; broad frequency band attenuators; circuit feedback; circuit topology/operating principles/characteristics; linear region MOSFET resistors; linear-controlled CMOS variable attenuators; passive-like attenuator structures; Attenuation; Attenuators; Bandwidth; CMOS process; Frequency; Gallium arsenide; Linearity; MOSFET circuits; Resistors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174939

Filename

1174939