GaN devices for microwave applications [FET/HEMT]

Author

Uren, M.J. ; Barnes, A.R. ; Martin, T. ; Balmer, R.S. ; Hilton, K.P. ; Hayes, D.G. ; Kuball, M.

Author_Institution

Malvern Technol. Centre, QinetiQ Ltd., Malvern, UK

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

111

Lastpage

118

Abstract

AlGaN/GaN field effect transistors offer spectacular improvements in performance compared to conventional III-V components. In particular they are well suited to applications requiring high levels of output power and are capable of producing RF output power levels approaching 12 W/mm of gate periphery with power added efficiency close to theoretical limits. This paper describes the current status of GaN based FETs and discusses circuit functions and system applications that can benefit from this disruptive technology.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN field effect transistors; FET gate periphery; HEMT; III-V components; high RF output power FET circuit functions; microwave application GaN devices; power added efficiency; Conducting materials; Costs; Epitaxial growth; Gallium arsenide; Gallium nitride; HEMTs; Microwave devices; Silicon carbide; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174940

Filename

1174940