Mobility enhancement in indium-rich N-channel InxGa1−xAs HEMTs by application of <110> uniaxial strain

Author

Xia, Ling ; del Alamo, Jesus A.

Author_Institution

Microsyst. Technol. Labs. (MTL), Massachusetts Inst. of Technol. (MIT), Cambridge, MA, USA

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

As in Si CMOS, the incorporation of mechanical strain offers the possibility of improving the performance of III-V field effect transistors (FETs). Quantifying its potential and providing fundamental understanding of the impact of strain are the goals of this study. This paper reports an investigation of the impact of <;110> uniaxial strain on n-type InAlAs/InGaAs HEMTs with a 70% InAs channel core. The main impact of strain is found to be a modification of the electron effective mass and mobility. A comparison between the effect of <;110> strain in Si and InGaAs suggests that strain engineering can indeed be leveraged to improve transport properties in deeply scaled InGaAs FETs.

Keywords

III-V semiconductors; aluminium compounds; effective mass; electron mobility; elemental semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; internal stresses; silicon; <;110> uniaxial strain; III-V field effect transistors; In_xGa_1-xAs; InAlAs-InGaAs; Si; channel core; deeply scaled FETs; electron effective mass; electron mobility; indium-rich N-channel HEMTs; mechanical strain; mobility enhancement; strain engineering; transport properties; Capacitive sensors; Effective mass; Electron mobility; FETs; HEMTs; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; MODFETs; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516249

Filename

5516249