• DocumentCode
    3117145
  • Title

    High sum-rate three-write and non-binary WOM codes

  • Author

    Yaakobi, Eitan ; Shpilka, Amir

  • Author_Institution
    Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2012
  • fDate
    1-6 July 2012
  • Firstpage
    1386
  • Lastpage
    1390
  • Abstract
    Write-once memory (WOM) is a storage medium with memory elements, called cells, which can take on q levels. Each cell is initially in level 0 and can only increase its level. A t-write WOM code is a coding scheme which allows one to store t messages to the WOM such that on consecutive writes every cell´s level does not decrease. The sum-rate of the WOM code, which is the ratio between the total amount of information written in the t writes and the number of memory cells, is bounded by log2(t + 1). Our main contribution in this work is a construction of binary three-write WOM codes with sum-rate approaching 1.885 for sufficiently large number of cells, while the upper bound is 2. This improves upon a recent construction of sum-rate 1.809. We also give constructions of non-binary WOM codes which give better sum-rate than the currently best known ones.
  • Keywords
    binary codes; binary three-write WOM codes; coding scheme; high sum-rate three-write WOM codes; memory cells; memory elements; nonbinary WOM codes; storage medium; t-write WOM code; upper bound; write-once memory codes; Ash; Complexity theory; Decoding; Encoding; Upper bound; Vectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Theory Proceedings (ISIT), 2012 IEEE International Symposium on
  • Conference_Location
    Cambridge, MA
  • ISSN
    2157-8095
  • Print_ISBN
    978-1-4673-2580-6
  • Electronic_ISBN
    2157-8095
  • Type

    conf

  • DOI
    10.1109/ISIT.2012.6283488
  • Filename
    6283488